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1

MOVPE process for horizontal reactors with reduced parasitic deposition

H. Hardtdegen, N. Kaluza, R. Steins, R. Schmidt, K. Wirtz, E.V. Yakovlev, R.A. Talalaev, Yu.N. Makarov

Journal:

Journal of Crystal Growth

Année:

2004

Langue:

english

Fichier:

PDF, 504 KB

english, 2004

2

Novel organometallic starting materials for group III–V semiconductor metal-organic chemical vapour deposition

M. Hostalek, L. Pohl, A. Brauers, P. Balk, V. Frese, H. Hardtdegen, R. Hövel, G.K. Regel, A. Molassioti, M. Moser, F. Scholz

Journal:

Thin Solid Films

Année:

1989

Langue:

english

Fichier:

PDF, 182 KB

english, 1989

3

Magnetism in GaN layers implanted by La, Gd, Dy and Lu

Z. Sofer, D. Sedmidubský, M. Moram, A. Macková, M. Maryško, J. Hejtmánek, C. Buchal, H. Hardtdegen, M. Václavů, V. Peřina, R. Groetzschel, M. Mikulics

Journal:

Thin Solid Films

Année:

2011

Langue:

english

Fichier:

PDF, 1.22 MB

english, 2011

4

Modeling and experimental verification of deposition behavior during AlGaAs growth: a comparison for the carrier gases N2 and H2

M. Dauelsberg, H. Hardtdegen, L. Kadinski, A. Kaluza, P. Kaufmann

Journal:

Journal of Crystal Growth

Année:

2001

Langue:

english

Fichier:

PDF, 629 KB

english, 2001

5

MOVPE growth and in situ characterization of GaN layers on sapphire substrates

H. Hardtdegen, N. Kaluza, R. Schmidt, R. Steins, E. V. Yakovlev, R. A. Talalaev, Yu. N. Makarov, J.-T. Zettler

Journal:

physica status solidi (a)

Année:

2004

Langue:

english

Fichier:

PDF, 317 KB

english, 2004

6

Residual strain in recessed AlGaN/GaN heterostructure field-effect transistors evaluated by micro photoluminescence measurements

Martin Mikulics, Hilde Hardtdegen, Andreas Winden, Alfred Fox, Michel Marso, Zdeněk Sofer, Hans Lüth, Detlev Grützmacher, Peter Kordoš

Journal:

physica status solidi (c)

Année:

2012

Langue:

english

Fichier:

PDF, 250 KB

english, 2012

7

Nanoimprint and selective-area MOVPE for growth of GaAs/InAs core/shell nanowires

Haas, F, Sladek, K, Winden, A, von der Ahe, M, Weirich, T E, Rieger, T, Lüth, H, Grützmacher, D, Schäpers, Th, Hardtdegen, H

Journal:

Année:

2013

Langue:

english

Fichier:

PDF, 2.51 MB

english, 2013

8

two-dimensional electron gases with strong spin-orbit coupling

Guzenko, Vitaliy A., Schäpers, Thomas, Hardtdegen, Hilde

Journal:

Physical Review B

Année:

2007

Langue:

english

Fichier:

PDF, 385 KB

english, 2007

9

As/InP rings

Appenzeller, J., Schäpers, Th., Hardtdegen, H., Lengeler, B., Lüth, H.

Journal:

Physical Review B

Année:

1995

Langue:

english

Fichier:

PDF, 200 KB

english, 1995

10

As/InP rings

Appenzeller, J., Schäpers, Th., Hardtdegen, H., Lengeler, B., Lüth, H.

Journal:

Physical Review B

Année:

1995

Langue:

english

Fichier:

PDF, 763 KB

english, 1995

11

Metal organic vapor phase epitaxy of hexagonal Ge–Sb–Te (GST)

Schuck, Martin, Rieß, Sally, Schreiber, Marcel, Mussler, Gregor, Grützmacher, Detlev, Hardtdegen, Hilde

Journal:

Journal of Crystal Growth

Année:

2015

Langue:

english

Fichier:

PDF, 933 KB

english, 2015

12

SPIE Proceedings [SPIE SPIE NanoScience + Engineering - San Diego, California, United States (Sunday 17 August 2014)] Spintronics VII - Spin injection and spin-orbit coupling in low-dimensional semiconductor nanostructures

Drouhin, Henri-Jean, Wegrowe, Jean-Eric, Razeghi, Manijeh, Heedt, Sebastian, Wehrmann, Isabel, Gerster, Thomas, Wenk, Paul, Kettemann, Stefan, Sladek, Kamil, Hardtdegen, Hilde, Bringer, Andreas, Schub

Année:

2014

Langue:

english

Fichier:

PDF, 10.20 MB

english, 2014

13

[AIP NOISE AND FLUCTUATIONS: 20th International Conference on Noice and Fluctuations (ICNF-2009) - Pisa (Italy) (14–19 June 2009)] AIP Conference Proceedings - Low Frequency Noise in 2 DEG Channel of AlGaN∕GaN Heterostructures Scaled to Nanosize Width

Vitusevich, Svetlana A., Petrychuk, Mykhaylo V., Sydoruk, Viktor A., Schäpers, Thomas, Hardtdegen, Hilde, Belyaev, Alexander E., Offenhäusser, Andreas, Klein, Norbert, Macucci, Massimo, Basso, Giova

Année:

2009

Langue:

english

Fichier:

PDF, 284 KB

english, 2009

14

[IEEE 2014 10th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Smolenice, Slovakia (2014.10.20-2014.10.22)] The Tenth International Conference on Advanced Semiconductor Devices and Microsystems - III-nitride nano-LEDs for single photon lithography

Trellenkamp, St., Mikulics, M., Winden, A., Arango, Y. C., Moers, J., Marso, M., Grutzmacher, D., Hardtdegen, H.

Année:

2014

Langue:

english

Fichier:

PDF, 2.65 MB

english, 2014

15

Modern chemical synthesis methods towards low-dimensional phase change structures in the Ge–Sb–Te material system

Hardtdegen, Hilde, Mikulics, Martin, Rieß, Sally, Schuck, Martin, Saltzmann, Tobias, Simon, Ulrich, Longo, Massimo

Journal:

Progress in Crystal Growth and Characterization of Materials

Année:

2015

Langue:

english

Fichier:

PDF, 3.35 MB

english, 2015

16

Electric Current and Noise in Long GaN Nanowires in the Space-Charge Limited Transport Regime

Sydoruk, V. A., Vitusevich, S. A., Hardtdegen, H., Petrychuk, M. V., Naumov, A. V., Korotyeyev, V. V., Kochelap, V. A., Belyaev, A. E.

Journal:

Fluctuation and Noise Letters

Année:

2017

Langue:

english

Fichier:

PDF, 336 KB

english, 2017

17

Compact extreme ultraviolet source for laboratory-based photoemission spectromicroscopy

Schmitz, Christoph, Wilson, Daniel, Rudolf, Denis, Wiemann, Carsten, Plucinski, Lukasz, Riess, Sally, Schuck, Martin, Hardtdegen, Hilde, Schneider, Claus M., Tautz, F. Stefan, Juschkin, Larissa

Journal:

Applied Physics Letters

Année:

2016

Langue:

english

Fichier:

PDF, 2.00 MB

english, 2016

18

KMC Simulation of the Electroforming, Set and Reset Processes in Redox-based Resistive Switching Devices

Abbaspour, Elhameh, Menzel, Stephan, Hardtdegen, Alexander, Hoffmann-Eifert, Susanne, Jungemann, Christoph

Journal:

IEEE Transactions on Nanotechnology

Année:

2018

Langue:

english

Fichier:

PDF, 4.19 MB

english, 2018

19

AlGaN/GaN HEMT Optimization Using the RoundHEMT Technology

M. Marso, P. Javorka, A. Alam, M. Wolter, H. Hardtdegen, A. Fox, M. Heuken, P. Kordos, H. Lüth

Journal:

physica status solidi (a)

Année:

2001

Langue:

english

Fichier:

PDF, 82 KB

english, 2001

20

The Influence of Nucleation Parameters on GaN Buffer Layer Properties Used for HEMT Application

N. Nastase, H. Hardtdegen, R. Schmidt, H. Bay, H. Lüth, A. Alam, M. Heuken

Journal:

physica status solidi (a)

Année:

2001

Langue:

english

Fichier:

PDF, 119 KB

english, 2001

21

Structural investigations of InGaAs/InGaAs SLSs for optoelectronic device applications

F. Royo, J. Camassel, P. Lefebvre, R. Meyer, H. Hardtdegen, B. Fraisse, R. Schwedler

Journal:

Superlattices and Microstructures

Année:

1994

Fichier:

PDF, 165 KB

1994

22

Homogeneity analysis of ion-implanted resonant tunnelling diodes for applications in digital logic circuits

Jörg Malindretos, Arno Förster, Klaus Michael Indlekofer, Mihail Ion Lepsa, Hilde Hardtdegen, Roland Schmidt, Hans Lüth

Journal:

Superlattices and Microstructures

Année:

2002

Langue:

english

Fichier:

PDF, 408 KB

english, 2002

23

Coordinatively saturated Ga compounds — A new type of group III precursor for the MOCVD of GaAs

V. Frese, G.K. Regel, H. Hardtdegen, A. Brauers, P. Balk, M. Hostalek, M. Lokai, L. Pohl

Journal:

Journal of Crystal Growth

Année:

1990

Langue:

english

Fichier:

PDF, 223 KB

english, 1990

24

MOVPE growth of GaAs using a N2 carrier

Hilde Hardtdegen, M. Hollfelder, R. Meyer, R. Carius, H. Münder, S. Frohnhoff, D. Szynka, H. Lüth

Journal:

Journal of Crystal Growth

Année:

1992

Langue:

english

Fichier:

PDF, 646 KB

english, 1992

25

Characterization of interface structure in GaInAs/InP superlattices by means of X-ray diffraction

R. Meyer, M. Hollfelder, H. Hardtdegen, B. Lengeler, H. Lüth

Journal:

Journal of Crystal Growth

Année:

1992

Langue:

english

Fichier:

PDF, 553 KB

english, 1992

26

Extremely high electron mobilities in modulation doped Ga1−xInxAs/InP heterostructures grown by LP-MOVPE

Hilde Hardtdegen, R. Meyer, Hilde Løken-Larsen, J. Appenzeller, Th. Schäipers, H. Liith

Journal:

Journal of Crystal Growth

Année:

1992

Langue:

english

Fichier:

PDF, 177 KB

english, 1992

27

Nucleation of wavy growth modes in quantum well stacks of III–V compound alloys

U. Bangert, A.J. Harvey, C. Dieker, H. Hardtdegen

Journal:

Journal of Crystal Growth

Année:

1995

Langue:

english

Fichier:

PDF, 970 KB

english, 1995

28

Heavy carbon doping in low-pressure metalorganic vapor phase epitaxy of GaAs using trimethylarsenic — a comparison between the carrier gases N2 and H2

Hilde Hardtdegen, Chr. Ungermanns, K. Wirtz, D. Guggi, J. Herion, Hildegard Siekmann, H. Lüth

Journal:

Journal of Crystal Growth

Année:

1994

Langue:

english

Fichier:

PDF, 631 KB

english, 1994

29

A new approach towards low-pressure metalorganic vapor phase epitaxy of (AlGa)As using triethylgallium and dimethylethylaminealane

Hilde Hardtdegen, Chr. Ungermanns, M. Hollfelder, T. Raafat, R. Carius, St. Hasenöhrl, H. Lüth

Journal:

Journal of Crystal Growth

Année:

1994

Langue:

english

Fichier:

PDF, 646 KB

english, 1994

30

A new method for controlled carbon doping in LP-MOVPE of GaAs using TMAs and mixtures of TMGaTEGa

Hilde Hardtdegen, T. Raafat, M. Hollfelder, Ch. Ungermanns

Journal:

Journal of Crystal Growth

Année:

1995

Langue:

english

Fichier:

PDF, 263 KB

english, 1995

31

The permeable junction base transistor with a new gate of extremely high doped p++ - GaAs

J. Gräber, M. Kamp, G. Mörsch, R. Meyer, H. Hardtdegen, H. Lüth

Journal:

Microelectronic Engineering

Année:

1992

Langue:

english

Fichier:

PDF, 266 KB

english, 1992

32

An outstanding innovation in LP-MOVPE: use of nitrogen as the carrier gas

H. Hardtdegen, P. Giannoules

Journal:

Année:

1995

Langue:

english

Fichier:

PDF, 676 KB

english, 1995

33

MOVPE GaN growth: determination of activation energy using in-situ reflectometry

N. Kaluza, R. Steins, H. Hardtdegen, H. Lueth

Journal:

Journal of Crystal Growth

Année:

2004

Langue:

english

Fichier:

PDF, 285 KB

english, 2004

34

Use of SiC band gap temperature dependence for absolute calibration of emissivity corrected pyrometers in III-nitride MOVPE

R. Steins, N. Kaluza, H. Hardtdegen, M. Zorn, K. Haberland, J.-T. Zettler

Journal:

Journal of Crystal Growth

Année:

2004

Langue:

english

Fichier:

PDF, 242 KB

english, 2004

35

Epitaxial growth and characterization of Fe thin films on wurtzite GaN(0 0 0 1)

R. Meijers, R. Calarco, N. Kaluza, H. Hardtdegen, M.v.d. Ahe, H.L. Bay, H. Lüth, M. Buchmeier, D.E. Bürgler

Journal:

Journal of Crystal Growth

Année:

2005

Langue:

english

Fichier:

PDF, 555 KB

english, 2005

36

Influence of the reactor inlet configuration on the AlGaN growth efficiency

E.V. Yakovlev, R.A. Talalaev, N. Kaluza, H. Hardtdegen, H.L. Bay

Journal:

Journal of Crystal Growth

Année:

2007

Langue:

english

Fichier:

PDF, 417 KB

english, 2007

37

The growth mechanism of GaN with different H2/N2 carrier gas ratios

Yong Suk Cho, Hilde Hardtdegen, Nicoleta Kaluza, Roger Steins, Gero Heidelberger, Hans Lüth

Journal:

Journal of Crystal Growth

Année:

2007

Langue:

english

Fichier:

PDF, 1.72 MB

english, 2007

38

Influence of growth temperature on the selective area MOVPE of InAs nanowires on GaAs (1 1 1) B using N2 carrier gas

M. Akabori, K. Sladek, H. Hardtdegen, Th. Schäpers, D. Grützmacher

Journal:

Journal of Crystal Growth

Année:

2009

Langue:

english

Fichier:

PDF, 267 KB

english, 2009

39

Influence of growth temperature on GaN:Cr incorporation and structural properties in MOVPE

Y.S. Cho, H. Hardtdegen, N. Kaluza, M. von der Ahe, U. Breuer, H.-P. Bochem, P. Ruterana, K. Schmalbuch, D. Wenzel, Th. Schäpers, B. Beschoten, D. Grützmacher, H. Lüth

Journal:

Journal of Crystal Growth

Année:

2009

Langue:

english

Fichier:

PDF, 1.15 MB

english, 2009

40

Investigation of AlN growth on sapphire substrates in a horizontal MOVPE reactor

Zdenek Sofer, Nicoleta Kaluza, Hilde Hardtdegen, Roger Steins, Yong Suk Cho, Josef Stejskal, David Sedmidubský

Journal:

Journal of Physics and Chemistry of Solids

Année:

2007

Langue:

english

Fichier:

PDF, 475 KB

english, 2007

41

Strain-enhanced electron mobility anisotropy in InxGa1−xAs/InP two-dimensional electron gases

Masashi Akabori, Thanh Quang Trinh, Masahiro Kudo, Hilde Hardtdegen, Thomas Schäpers, Toshi-kazu Suzuki

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Année:

2010

Langue:

english

Fichier:

PDF, 447 KB

english, 2010

42

On the choice of precursors for the MOVPE-growth of high-quality Al0.30Ga0.70As/GaAs v-groove quantum wires with large subband spacing

A. Kaluza, A. Schwarz, D. Gauer, H. Hardtdegen, N. Nastase, H. Lüth, Th. Schäpers, D. Meertens, A. Maciel, J. Ryan, E. O’Sullivan

Journal:

Journal of Crystal Growth

Année:

2000

Langue:

english

Fichier:

PDF, 363 KB

english, 2000

43

On the influence of gas inlet configuration with respect to homogeneity in a horizontal single wafer MOVPE reactor

Hilde Hardtdegen, Andreas Kaluza, D. Gauer, M.v.d. Ahe, M. Grimm, P. Kaufmann, L. Kadinski

Journal:

Journal of Crystal Growth

Année:

2001

Langue:

english

Fichier:

PDF, 289 KB

english, 2001

44

Real-time calibration of wafer temperature, growth rate and composition by optical in-situ techniques during AlxGa1−xAs growth in MOVPE

K. Haberland, A. Kaluza, M. Zorn, M. Pristovsek, H. Hardtdegen, M. Weyers, J.-T. Zettler, W. Richter

Journal:

Journal of Crystal Growth

Année:

2002

Langue:

english

Fichier:

PDF, 199 KB

english, 2002

45

MOMBE and characterization of InAs and (Al,Ga)Sb

Ch Ungermanns, H Hardtdegen, M Matt, A Förster, M.v.d Ahe, R Carius, R Schmidt, H Lüth

Journal:

Journal of Crystal Growth

Année:

1998

Langue:

english

Fichier:

PDF, 144 KB

english, 1998

46

Electrical behaviour of the InPInGaAs based MSM-2DEG diode

M. Marso, M. Horstmann, H. Hardtdegen, P. Kordoš, H. Lüth

Journal:

Solid-State Electronics

Année:

1997

Langue:

english

Fichier:

PDF, 577 KB

english, 1997

47

Optoelectronic d.c. and r.f. behavior ofInP/InGaAs based HEMTs

M Marso, M Horstmann, H Hardtdegen, P Kordoš

Journal:

Solid-State Electronics

Année:

1998

Langue:

english

Fichier:

PDF, 245 KB

english, 1998

48

Electron states, magneto-transport and carrier dynamics in modulation-dopedV-groove quantum wires

A.C Maciel, J Kim, J.F Ryan, A Schwarz, Th Schäpers, Ch Dieker, H Hardtdegen, H Lüth

Journal:

Solid-State Electronics

Année:

1998

Langue:

english

Fichier:

PDF, 239 KB

english, 1998

49

Spontaneous formation of a tilted AlGaAsGaAs superlattice during AlGaAs growth

A. Hartmann, Ch. Dieker, M. Hollfelder, H. Hardtdegen, A. Förster, H. Lüth

Journal:

Applied Surface Science

Année:

1998

Langue:

english

Fichier:

PDF, 638 KB

english, 1998

50

Optical and transport studies of hot electrons in modulation-doped quantum wires

A.C Maciel, J Kim, E.D O'Sullivan, J.F Ryan, A Schwarz, A Kaluza, H Hardtdegen, Th Schäpers, D Meertens, Ch Dieker, H Lüth

Journal:

Physica B: Condensed Matter

Année:

1999

Langue:

english

Fichier:

PDF, 184 KB

english, 1999